Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology

@article{Jagannathan2002SelfalignedSN,
  title={Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology},
  author={Basanth Jagannathan and M. Khater and F. Pagette and J. Rieh and D. Angell and H. Chen and John E. Florkey and F. Golan and D. Greenberg and R P Groves and S. J. Jeng and J. Johnson and E. Mengistu and K. Schonenberg and C. Schnabel and P. Smith and A. Stricker and D. C. Ahlgren and Gordon J Freeman and K. J Stein and Seshu Subbanna},
  journal={IEEE Electron Device Letters},
  year={2002},
  volume={23},
  pages={258-260}
}
This paper reports on SiGe NPN HBTs with unity gain cutoff frequency (f/sub T/) of 207 GHz and an f/sub MAX/ extrapolated from Mason's unilateral gain of 285 GHz. f/sub MAX/ extrapolated from maximum available gain is 194 GHz. Transistors sized 0.12/spl times/2.5 /spl mu/m/sup 2/ have these characteristics at a linear current of 1.0 mA//spl mu/m (8.3 mA//spl mu/m/sup 2/). Smaller transistors (0.12/spl times/0.5 /spl mu/m/sup 2/) have an f/sub T/ of 180 GHz at 800 /spl mu/A current. The devices… CONTINUE READING
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