Self-aligned 0.12 /spl mu/m T-gate In/sub .53/Ga/sub .47/As/In/sub .52/Al/sub .48/As HEMT technology utilising a non-annealed ohmic contact strategy

Abstract

An InGaAs/InAlAs based HEMT structure, lattice matched to an InP substrate, is presented in which drive current and transconductance has been optimized through a double-delta doping strategy. Together with an increase in channel carrier density, this allows the use of a non-annealed ohmic contact process. HEMT devices with 120 nm standard and self-aligned T… (More)

9 Figures and Tables

Topics

  • Presentations referencing similar topics