Self-Heating Measurement of 14-nm FinFET SOI Transistors Using 2-D Time-Resolved Emission

@article{Stellari2016SelfHeatingMO,
  title={Self-Heating Measurement of 14-nm FinFET SOI Transistors Using 2-D Time-Resolved Emission},
  author={Franco Stellari and Keith A. Jenkins and Alan J. Weger and Barry P. Linder and Peilin Song},
  journal={IEEE Transactions on Electron Devices},
  year={2016},
  volume={63},
  pages={2016-2022}
}
Self-heating of FinFET transistors is a reliability concern, especially for large devices with dense arrays of fins on Silicon On Insulator. In this paper, device-level temperature measurements acquired using an optical technique are presented. The 2-D time-resolved emission measurements through the substrate are used to monitor the temperature-dependent… CONTINUE READING