Self-Curable Gate-All-Around MOSFETs Using Electrical Annealing to Repair Degradation Induced From Hot-Carrier Injection

@article{Park2016SelfCurableGM,
  title={Self-Curable Gate-All-Around MOSFETs Using Electrical Annealing to Repair Degradation Induced From Hot-Carrier Injection},
  author={Jun-Young Park and Dong-Il Moon and Myeong-Lok Seol and Choong-Ki Kim and Chang-Hoon Jeon and Hagyoul Bae and Tewook Bang and Yang-Kyu Choi},
  journal={IEEE Transactions on Electron Devices},
  year={2016},
  volume={63},
  pages={910-915}
}
Device degradation induced by hot-carrier injection was repaired by electrical annealing using Joule heat through a built-in heater in a gate. The concentrated high temperature anneals the gate oxide locally and the degraded device parameters are recovered or further enhanced within a short time of 1 ms. Selecting a proper range of repair voltage is very important to maximize the annealing effects and minimize the extra damages caused by excessive high temperature. The repairing voltage is… CONTINUE READING

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