Self-Assembling InP/In0.48Ga0.52P Quantum Dots Grown by MBE

@inproceedings{Kurtenbach1995SelfAssemblingIQ,
  title={Self-Assembling InP/In0.48Ga0.52P Quantum Dots Grown by MBE},
  author={Andreas Kurtenbach and K Kurt Eberl and Klemens Brunner and Gerhard Abstreiter},
  year={1995}
}
We report on the growth of InP/In0.48Ga0.52P islands on (001) GaAs substrates by solid-source molecular beam epitaxy. The islands evolve due to the lattice mismatch of 3.7% between InP and In0.48Ga0.52P. After a deposit of nominally 2 monolayers the island formation has already started according to atomic force microscopy. InP photoluminescence of free standing islands is measured. The InP photoluminescence shifts typically to about 100 meV higher energy in presence of an In0.48Ga0.52P cap… CONTINUE READING