Self-Aligned van der Waals Heterojunction Diodes and Transistors.

@article{Sangwan2018SelfAlignedVD,
  title={Self-Aligned van der Waals Heterojunction Diodes and Transistors.},
  author={Vinod K. Sangwan and Megan E. Beck and Alex Henning and Jiajia Luo and Hadallia Bergeron and Junmo Kang and Itamar Balla and Hadass S. Inbar and Lincoln J. Lauhon and Mark C. Hersam},
  journal={Nano letters},
  year={2018},
  volume={18 2},
  pages={
          1421-1427
        }
}
A general self-aligned fabrication scheme is reported here for a diverse class of electronic devices based on van der Waals materials and heterojunctions. In particular, self-alignment enables the fabrication of source-gated transistors in monolayer MoS2 with near-ideal current saturation characteristics and channel lengths down to 135 nm. Furthermore, self-alignment of van der Waals p-n heterojunction diodes achieves complete electrostatic control of both the p-type and n-type constituent… 

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