Selectively-doped Al0.48In0.52As/Ga0.47In0.52As heterostructure transistors

  title={Selectively-doped Al0.48In0.52As/Ga0.47In0.52As heterostructure transistors},
  author={T J Pearsall and R. Hendel and P. B. O'Connor and K. Alavi and A. T. Cho},
  journal={1982 International Electron Devices Meeting},
Selectively-doped FETs have been fabricated which show full pinch-off at 295K wi h transconductances in excess of 90 mS/mm, and contact resistances of 0.2-0.4R-mm. The divice properties we have obtained represent a significant improvement over previously published results on imilar structures. At 77K the transconductance more than doubles in value to 200mS… CONTINUE READING