Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography

@inproceedings{Liu2011SelectiveAE,
  title={Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography},
  author={Guangyu Liu and Hongping Zhao and Jing Yun Zhang and Joo Hyung Park and Luke Mawst and Nelson Tansu},
  booktitle={Nanoscale research letters},
  year={2011}
}
Highly uniform InGaN-based quantum dots (QDs) grown on a nanopatterned dielectric layer defined by self-assembled diblock copolymer were performed by metal-organic chemical vapor deposition. The cylindrical-shaped nanopatterns were created on SiNx layers deposited on a GaN template, which provided the nanopatterning for the epitaxy of ultra-high density QD… CONTINUE READING