Selective Fabrication of SiC/Si Diodes by Excimer Laser Under Ambient Conditions

@article{Kaur2016SelectiveFO,
  title={Selective Fabrication of SiC/Si Diodes by Excimer Laser Under Ambient Conditions},
  author={Amanpreet Kaur and Premjeet Chahal and Timothy P. Hogan},
  journal={IEEE Electron Device Letters},
  year={2016},
  volume={37},
  pages={142-145}
}
This letter presents SiC/Si diodes fabricated by the selective growth of SiC on Si substrate under ambient (atmospheric) conditions. The selective growth of β-SiC was obtained by irradiating a high-power KrF excimer laser beam on a polymethyl methacrylate (PMMA)-coated Si wafer. The laser decomposed carbon atoms from the PMMA, which dissolve into molten Si to form SiC. The Raman spectrum of the grown samples shows a dominant band in the range of 930-990 cm<sup>-1</sup>, i.e., the spectral… CONTINUE READING
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