Seeding layer assisted selective-area growth of As-rich InAsP nanowires on InP substrates.

We present the first demonstration of arsenic-rich InAs1-xPx (0 ≤ x ≤ 0.33) nanowire arrays grown on InP (111)B substrates by catalyst-free selective-area metal-organic chemical vapor deposition. It is shown that by introducing a thin InAs seeding layer prior to the growth of the nanowire, an extremely high vertical yield is achieved by eliminating… CONTINUE READING