Schred V2.0: Tool to model MOS capacitors

@article{Kannan2010SchredVT,
  title={Schred V2.0: Tool to model MOS capacitors},
  author={Gokula Kannan and Dragica Vasileska},
  journal={2010 14th International Workshop on Computational Electronics},
  year={2010},
  pages={1-4}
}
In this paper we present SCHRED V2.0 to the scientific community. This simulation tool allows modeling of MOS capacitors with silicon and strained-Si substrates with arbitrary crystallographic directions. The tool can also model any material whose conduction band model is represented with three significant valleys. It is also capable of modeling a MOS… CONTINUE READING