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@article{Kannan2010SchredVT, title={Schred V2.0: Tool to model MOS capacitors}, author={Gokula Kannan and Dragica Vasileska}, journal={2010 14th International Workshop on Computational Electronics}, year={2010}, pages={1-4} }

- Published 2010 in 2010 14th International Workshop on Computational…

In this paper we present SCHRED V2.0 to the scientific community. This simulation tool allows modeling of MOS capacitors with silicon and strained-Si substrates with arbitrary crystallographic directions. The tool can also model any material whose conduction band model is represented with three significant valleys. It is also capable of modeling a MOS… CONTINUE READING

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