Schottky barrier MOSFETs for silicon nanoelectronics

@article{Tucker1997SchottkyBM,
  title={Schottky barrier MOSFETs for silicon nanoelectronics},
  author={John Robinson Tucker},
  journal={1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings},
  year={1997},
  pages={97-100}
}
Metal silicide source/drain MOSFETs may provide a simple route to terabit integrated circuits with /spl sim/25 nm gate length and /spl sim/100 nm overall device size. Potential advantages of this approach are outlined here along with recent progress. 

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