Schottky Gated Field Effect Transistors and Visible Electroluminescent Diodes Utilizing Poly(3-alkylthiophene)s

@inproceedings{Ohmori1993SchottkyGF,
  title={Schottky Gated Field Effect Transistors and Visible Electroluminescent Diodes Utilizing Poly(3-alkylthiophene)s},
  author={Yutaka Ohmori and Masao Uchida and Keiro Muro and Chikayoshi Morishima and Katsumi Yoshino},
  year={1993}
}
Abstract Fabrication and characteristics of Schottky gated field effect transistors (FETs) and visible electroluminescent (EL) diodes utilizing poly(3-alkylthiophene)s have been presented. The FETs show typical enhancement type metal-semiconductor FET characteristics. Large temperature dependence and gas-sensitivity have been found for poly(3-alkylthiophene) FETs. Visible red-orange poly(3-alkylthiophene) EL diodes have been successfully fabricated utilizing poly(3-alkylthiophene)s with long… CONTINUE READING