Schottky-Barrier Carbon Nanotube Field-Effect Transistor Modeling

@article{Hazeghi2006SchottkyBarrierCN,
  title={Schottky-Barrier Carbon Nanotube Field-Effect Transistor Modeling},
  author={Aryan Hazeghi and Tejas Krishnamohan and H.-S. Philip Wong},
  journal={IEEE Transactions on Electron Devices},
  year={2006},
  volume={54},
  pages={439-445}
}
The theoretical performance of carbon nanotube field-effect transistors (CNFETs) with Schottky barriers (SBs) is examined by means of a general ballistic model. A novel approach is used to treat the SBs at the metal-nanotube contacts as mesoscopic scatterers by modifying the distribution functions for carriers in the channel. Noticeable current reduction is observed compared to previous ballistic models without SBs. Evanescent-mode analysis is used to derive a scale length and the potential… CONTINUE READING
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