Scanning tunneling spectroscopy reveals a silicon dangling bond charge state transition

@article{Labidi2015ScanningTS,
  title={Scanning tunneling spectroscopy reveals a silicon dangling bond charge state transition},
  author={Hatem Labidi and Marco Taucer and Mohammad Rashidi and Mohammad Mehdi Koleini and Lucian Livadaru and Jason Pitters and Martin Cloutier and Mark Salomons and Robert A. Wolkow},
  journal={arXiv: Mesoscale and Nanoscale Physics},
  year={2015}
}
We report the study of single dangling bonds (DB) on the hydrogen terminated silicon (100) surface using a low temperature scanning tunneling microscope (LT-STM). By investigating samples prepared with different annealing temperatures, we establish the critical role of subsurface arsenic dopants on the DB electronic properties. We show that when the near surface concentration of dopants is depleted as a result of $1250{\deg}C$ flash anneals, a single DB exhibits a sharp conduction step in its I… 

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