Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's

@article{Auth1997ScalingTF,
  title={Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's},
  author={C. P. Auth and J B Plummer},
  journal={IEEE Electron Device Letters},
  year={1997},
  volume={18},
  pages={74-76}
}
We present a scaling theory for fully-depleted, cylindrical MOSFET's. This theory was derived from the cylindrical form of Poisson's equation by assuming a parabolic potential in the radial direction. Numerical device simulation data for subthreshold slope and DIBL were compared to the model to validate the formula. By employing the scaling theory a comparison with double-gate (DG) MOSFET's was carried out illustrating an improvement of up to 40% in the minimum effective channel length for the… CONTINUE READING
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