Scaling the Suspended-Gate FET: Impact of Dielectric Charging and Roughness

@article{Bardon2010ScalingTS,
  title={Scaling the Suspended-Gate FET: Impact of Dielectric Charging and Roughness},
  author={M. G. Bardon and H. P. Neves and Robert Puers and Chris Van Hoof},
  journal={IEEE Transactions on Electron Devices},
  year={2010},
  volume={57},
  pages={804-813}
}
Suspended gate field-effect transistors (SG-FETs) with switching gates are interesting as digital logic switches because of their high I on/I off current ratio and their infinite subthreshold slope. However, the limits of scalability of the SG-FETs are still unclear. This paper investigates two effects that could limit scaling: the dielectric charging and the dielectric roughness. To do so, a surface-potential-based model for suspended gate transistors with a mechanically switching gate is… CONTINUE READING

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