Scaling of nano-Schottky-diodes
@article{Smit2002ScalingON, title={Scaling of nano-Schottky-diodes}, author={G. Smit and S. Rogge and T. Klapwijk}, journal={Applied Physics Letters}, year={2002}, volume={81}, pages={3852-3854} }
A generally applicable model is presented to describe the potential barrier shape in ultrasmall Schottky diodes. It is shown that for diodes smaller than a characteristic length lc (associated with the semiconductor doping level) the conventional description no longer holds. For such small diodes the Schottky barrier thickness decreases with decreasing diode size. As a consequence, the resistance of the diode is strongly reduced, due to enhanced tunneling. Without the necessity of assuming a… Expand
214 Citations
Numerical analysis of nano schottky junctions for developing novel sub-20 nm electronic devices
- Materials Science, Computer Science
- 2014 21st IEEE International Conference on Electronics, Circuits and Systems (ICECS)
- 2014
- 2
Current transport mechanism in a metal-GaN nanowire Schottky diode.
- Materials Science, Medicine
- Nanotechnology
- 2007
- 33
Influence of Schottky barrier on conductance of a metal-semiconductor atomic quantum point contact
- Materials Science
- 2016
- 2
Electron transport characteristics of the carbon nanotubes/Si heterodimensional heterostructure
- Physics
- 2008
- 11
The dependence of Schottky junction (I–V) characteristics on the metal probe size in nano metal–semiconductor contacts
- Materials Science
- 2018
- 9
Characterization of nano Schottky junctions for a new structure of nano-electronic devices
- Materials Science
- 14th IEEE International Conference on Nanotechnology
- 2014
- 3
Simulating Downscaling of Ohmic Contacts on Wide-Bandgap Low-Resistivity Semiconductors
- Materials Science
- IEEE Transactions on Electron Devices
- 2012
- 5
References
SHOWING 1-10 OF 13 REFERENCES
Enhanced tunneling across nanometer-scale metal–semiconductor interfaces
- Physics, Materials Science
- 2002
- 95
- PDF
Schottky barriers in carbon nanotube heterojunctions
- Materials Science, Physics
- Physical review letters
- 2000
- 128
- PDF
Electron transport at metal-semiconductor interfaces: General theory.
- Materials Science, Medicine
- Physical review. B, Condensed matter
- 1992
- 1,177
Model for Schottky barrier and surface states in nanostructured n-type semiconductors
- Materials Science
- 2002
- 109
Scanning tunneling microscope tip–sample interactions: Atomic modification of Si and nanometer Si Schottky diodes
- Chemistry
- 1993
- 50
Functional nanoscale electronic devices assembled using silicon nanowire building blocks.
- Materials Science, Medicine
- Science
- 2001
- 2,379
- PDF