Scaling of High-Aspect-Ratio Current Limiters for the Individual Ballasting of Large Arrays of Field Emitters

@article{Guerrera2011ScalingOH,
  title={Scaling of High-Aspect-Ratio Current Limiters for the Individual Ballasting of Large Arrays of Field Emitters},
  author={Stephen A. Guerrera and L. F. Velasquez-Garcia and Akintunde Ibitayo Akinwande},
  journal={2011 24th International Vacuum Nanoelectronics Conference},
  year={2011},
  pages={83-84}
}
We report the fabrication and characterization of high-aspect-ratio silicon pillar current limiters [vertical ungated field-effect transistors (FETs)] for ballasting individual field emitters within field-emitter arrays (FEAs). Dense (1-<formula formulatype="inline"><tex Notation="TeX">$\mu\hbox{m}$</tex></formula> pitch) FEAs that are individually ballasted by 100-nm-diameter and 10-<formula formulatype="inline"><tex Notation="TeX">$\mu\hbox{m}$</tex></formula>-tall current limiters were… CONTINUE READING
9 Extracted Citations
18 Extracted References
Similar Papers

Citing Papers

Publications influenced by this paper.
Showing 1-9 of 9 extracted citations

Referenced Papers

Publications referenced by this paper.
Showing 1-10 of 18 references

Temporal and spatial current stability of smart field emission arrays

  • C. A. Ball D. Temple, W. D. Palmer, +4 authors H. F. Gray
  • IEEE Trans . Electron Devices
  • 2005

Silicon field emission arrays with atomically sharp tips: turn-on voltage and the effect of tip radius distribution

  • M. Ding, G. Sha, A. I. Akinwande
  • IEEE Transactions on Electron Devices, vol. 49…
  • 2002
1 Excerpt

Ultrastable emission from a metal– oxide–semiconductor field-effect transistor-structured Si emitter tip

  • J. Itoh, T. Hirano, S. Kanemaru
  • Applied Physics Letters, 69(11):1577–1578, 1996.
  • 1996
1 Excerpt

Field emission cathode.

  • Y. Kobori, M. Tanaka
  • U.S. Patent 5
  • 1992
1 Excerpt

Similar Papers

Loading similar papers…