Scaling issues related to high field phenomena in submicrometer MOSFET's

Abstract

Both enhancement and depletion n-channel MOS devices with electrical channel lengths between 1 and 0.3 µm are characterized in terms of carrier heating effects. The effect of gate oxide thickness on the two-dimensional (2-D) electric field distribution has been analyzed through 2-D numerical device simulation, and its impact on carrier heating process… (More)

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Cite this paper

@article{Sangiorgi1986ScalingIR, title={Scaling issues related to high field phenomena in submicrometer MOSFET's}, author={E.. Sangiorgi and E. A. Hofstatter and R. K. Smith and P. F. Bechtold and Wolfgang Fichtner}, journal={IEEE Electron Device Letters}, year={1986}, volume={7}, pages={115-118} }