Scaling flow diagram in the fractional quantum Hall regime ofGaAs∕AlxGa1−xAsheterostructures

@inproceedings{Murzin2005ScalingFD,
  title={Scaling flow diagram in the fractional quantum Hall regime ofGaAs∕AlxGa1−xAsheterostructures},
  author={S. S. Murzin and Sergei I. Dorozhkin and Duncan K. Maude and A. G. M. Jansen},
  year={2005}
}
The temperature driven flow lines of the Hall and dissipative magnetoconductance data (\sigma_{xy},\sigma_{xx}) are studied in the fractional quantum Hall regime for a 2D electron system in GaAs/Al_{x}Ga_{1-x}As heterostructures. The flow lines are rather well described by a recent unified scaling theory developed for both the integer and the fractional quantum Hall effect in a totally spin-polarized 2D electron system which predicts that one (\sigma_{xy},\sigma_{xx}) point determines a… CONTINUE READING

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