Scaling/LER study of Si GAA nanowire FET using 3D Finite Element Monte Carlo simulations

Abstract

ID-VG characteristics of a 22 nm gate length gate-all-around (GAA) Si nanowire (NW) obtained from a 3D Finite Element (FE) Monte Carlo (MC) in-house simulation toolbox which uses anisotropic 2D Schrödinger equation based quantum corrections (SEQC) are compared against experimental data with excellent agreement at both low and high drain biases. We… (More)

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Cite this paper

@article{Elmessary2016ScalingLERSO, title={Scaling/LER study of Si GAA nanowire FET using 3D Finite Element Monte Carlo simulations}, author={Muhammad A. Elmessary and Daniel Nagy and Manuel Aldegunde and Natalia Seoane and Guillermo Indalecio and Jari Lindberg and Wulf G. Dettmer and Djordje Peric and Antonio J. Garc{\'i}a-Loureiro and Karol Kalna}, journal={2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)}, year={2016}, pages={52-55} }