Scaleable Single-Photon Avalanche Diode Structures in Nanometer CMOS Technology

@article{Richardson2011ScaleableSA,
  title={Scaleable Single-Photon Avalanche Diode Structures in Nanometer CMOS Technology},
  author={J. Richardson and E. Webster and L. Grant and R. Henderson},
  journal={IEEE Transactions on Electron Devices},
  year={2011},
  volume={58},
  pages={2028-2035}
}
Single-photon avalanche photodiodes (SPADs) operating in Geiger mode offer exceptional time resolution and optical sensitivity. Implementation in modern nanometer-scale complementary metal-oxide-semiconductor (CMOS) technologies to create dense high-resolution arrays requires a device structure that is scaleable down to a few micrometers. A family of three SPAD structures with sub-100-Hz mean dark count rate (DCR) is proposed in 130-nm CMOS image sensor technology. Based on a novel retrograde… Expand
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