Scalable model for predicting the effect of negative bias temperature instability for reliable design

@article{Bhardwaj2008ScalableMF,
  title={Scalable model for predicting the effect of negative bias temperature instability for reliable design},
  author={Sarvesh Bhardwaj and Wenping Wang and Rakesh Vattikonda and Yu Cao and Sarma B. K. Vrudhula},
  journal={IET Circuits, Devices & Systems},
  year={2008},
  volume={2},
  pages={361-371}
}
The authors present a predictive model for the negative bias temperature instability (NBTI) of PMOS under both short term and long term operation. On the basis of the reaction – diffusion mechanism, this model accurately captures the dependence of NBTI on the oxide thickness (tox), the diffusing species (H or H2) and other key transistor and design parameters. In addition, a closed form expression for the threshold voltage change (DVth) under multiple cycle dynamic operation is derived. Model… CONTINUE READING
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