Scalable general high voltage MOSFET model including quasi-saturation and self-heating effects

@inproceedings{Chauhan2006ScalableGH,
  title={Scalable general high voltage MOSFET model including quasi-saturation and self-heating effects},
  author={Yogesh Singh Chauhan and Costin Anghel and François Krummenacher and Christian W. Maier and Renaud Gillon and Benoit Bakeroot and B. Desoete and Steven Frere and Andre Baguenier Desormeaux and Abhinav Sharma and Michel J. Declercq and Adrian M. Ionescu},
  year={2006}
}
In this work, we present for the first time, a highly scalable general high voltage MOSFET model, which can be used for any high voltage MOSFET with extended drift region. This model includes physical effects like the quasi-saturation, impact-ionization and self-heating, and a new general model for drift resistance. The model is validated on the measured characteristics of two widely used high voltage devices in the industry i.e. LDMOS and VDMOS devices, and implemented on commercial circuit… CONTINUE READING
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