Scalable and fully self-aligned n-type carbon nanotube transistors with gate-all-around

Abstract

While proven to provide high performance at sub-10 nm lengths, carbon nanotube (CNT) field-effect transistors (FETs) typically employ impractical gate geometries. Here we demonstrate fully self-aligned CNTFETs that include a gate-all-around (GAA) the nanotube channels - the ideal gate geometry for a 1D CNT. These GAA-CNTFETs have 30 nm channel lengths and… (More)

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