Sb-heterostructure backward diode detectors with ultrathin tunnel barriers

Abstract

Sb-heterostructure backward diodes have proven to be a strong contender for millimeter-wave direct detection applications, primarily due to their high sensitivity, low noise and high frequency response. It has been shown that thinning the AlSb barrier thickness (from 32 Å to 11 Å) greatly reduced the junction resistance (Rj) and thus the associated Johnson… (More)

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