Sb-based heterostructure backward diodes with improved sensitivity

Abstract

In this paper, a promising alternative to these devices is the heterostructure backward diode based on the InAs/AlSb/GaSb material system. We have achieved record measured sensitivities through W-band, with an average zero-bias sensitivity of 3513 V/W and a biased sensitivity of 8124 V/W over the range of 1 to 70 GHz when driven from a 50 /spl Omega/ source… (More)

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