Saturation effects observed in high fluence heavy ion implantation at few tens of keV

@inproceedings{Sahu2009SaturationEO,
  title={Saturation effects observed in high fluence heavy ion implantation at few tens of keV},
  author={Gayatri Sahu and Shyama Rath and Boby Joseph and Gouri Shankar Roy and Durga Prasad Mahapatra},
  year={2009}
}
Abstract Effect of implantation fluence on the total number of metal atoms incorporated in a host matrix at few tens of keV beam energy has been studied experimentally using Rutherford backscattering spectrometry (RBS) as well as using simple calculations, taking Au and Ag ions for host matrices Si and silica glass. In all the cases, calculations showed that the total number of retained metal atoms are identical to the implantation fluence upto 3 × 10 16 ions cm −2 above which the metal content… CONTINUE READING