Sample-to-Sample Variability and Bit Errors Induced by Total Dose in Advanced NAND Flash Memories

@article{Bagatin2014SampletoSampleVA,
  title={Sample-to-Sample Variability and Bit Errors Induced by Total Dose in Advanced NAND Flash Memories},
  author={Marta Bagatin and Simone Gerardin and Federica Ferrarese and Alessandro Paccagnella and Veronique Ferlet-Cavrois and Alessandra Costantino and M. Muschitiello and Angelo Visconti and Pierre-Xiao Wang},
  journal={IEEE Transactions on Nuclear Science},
  year={2014},
  volume={61},
  pages={2889-2895}
}
The variability in the total ionizing dose response of 25-nm single level cell NAND Flash memories from two different lots is studied. More than 1 Terabit of floating gate cells were irradiated with gamma rays and the number of errors was statistically analyzed. The behavior of the two lots is remarkably different in terms of floating gate errors. The… CONTINUE READING

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