STRIPE-a high-speed VLSI bipolar technology featuring self-aligned single-poly base and submicron emitter contacts

@article{Drowley1990STRIPEaHV,
  title={STRIPE-a high-speed VLSI bipolar technology featuring self-aligned single-poly base and submicron emitter contacts},
  author={C. I. Drowley and W. M. Huang and P. J. Vande Voorde and Donald Pettengill and J. E. Turner and A. Kapoor and C. H. Lin and Graham Burton and S S Rosner and Kenneth Brigham and H.-S. Fu and S.-Y. Oh and M. P. Scott and S P Chiang and A. Wang},
  journal={Digest of Technical Papers.1990 Symposium on VLSI Technology},
  year={1990},
  pages={53-54}
}
Experimental results are presented for a high-performance silicon bipolar transistor structure utilizing a single layer of polysilicon for both the base and emitter contacts. This structure, called STRIPE (self-aligned trench-isolated polysilicon electrodes), provides a 2.0-μm emitter/base polysilicon contact separation. A 0.4-μm emitter width is… CONTINUE READING