ST UDY OF DEFE CTS IN G eTe

@inproceedings{SOLU2004STUO,
  title={ST UDY OF DEFE CTS IN G eTe},
  author={SOLI D SOLU},
  year={2004}
}
  • SOLI D SOLU
  • Published 2004
Positron lif etimes and Do ppler broadening of the annihi l atio n line mea surements were perf ormed to study the vacancy typ e defects in polycrystallin e GeT e and (GeT e) ( 1 À x ) (A gBiT e2 ) x ( = 0 0 0 3 0 05 0 1 0 15 0 2, and 1) solid solutio ns. The values of lif etimes obtained are explaine d as due to positron and p ositronium saturated trapping… CONTINUE READING