SRAM for Error-Tolerant Applications With Dynamic Energy-Quality Management in 28 nm CMOS

@article{Frustaci2015SRAMFE,
  title={SRAM for Error-Tolerant Applications With Dynamic Energy-Quality Management in 28 nm CMOS},
  author={Fabio Frustaci and Mahmood Khayatzadeh and David Blaauw and Dennis Sylvester and Massimo Alioto},
  journal={IEEE Journal of Solid-State Circuits},
  year={2015},
  volume={50},
  pages={1310-1323}
}
In this paper, a voltage-scaled SRAM for both error-free and error-tolerant applications is presented that dynamically manages the energy/quality trade-off based on application need. Two variation-resilient techniques, write assist and Error Correcting Code, are selectively applied to bit positions having larger impact on the overall quality, while jointly performing voltage scaling to improve overall energy efficiency. The impact of process variations, voltage and temperature on the energy… CONTINUE READING
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