SRAM PUF quality and reliability comparison for 28 nm planar vs. 16 nm FinFET CMOS processes

Abstract

SRAM physical unclonable function (PUF) provides a low-cost security key to address hardware attacks such as cloning as well as for reliability tracking of ICs in the field. In this work the quality and aging reliability of 28 nm high-K metal gate planar and 16 nm FinFET based SRAMs are discussed in detail with regards to their use in PUF. Data indicates… (More)

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Cite this paper

@article{Narasimham2017SRAMPQ, title={SRAM PUF quality and reliability comparison for 28 nm planar vs. 16 nm FinFET CMOS processes}, author={Balaji Narasimham and Dan Reed and Saket Gupta and Ennis T. Ogawa and Yifei Zhang and J. K. Wang}, journal={2017 IEEE International Reliability Physics Symposium (IRPS)}, year={2017}, pages={PM-11.1-PM-11.4} }