SPICE model development for SiC power MOSFET

  title={SPICE model development for SiC power MOSFET},
  author={Rajendra Pratap and Ravindra K. Singh and Vineeta Agarwal},
  journal={2012 IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES)},
SiC Power MOSFETs show a tremendous potential for high voltage, high temperature, high-power and high-frequency power electronic applications. A simplified SPICE model is proposed for the SiC Power MOSFET, CMF20120D, based on the understanding of the power MOSFET discrete devices terminal behavior. The aim of the model development is to reuse the available… CONTINUE READING