SPICE Modeling of Double-Gate Tunnel-FETs Including Channel Transports

@article{Zhang2014SPICEMO,
  title={SPICE Modeling of Double-Gate Tunnel-FETs Including Channel Transports},
  author={Lining Zhang and Mansun Chan},
  journal={IEEE Transactions on Electron Devices},
  year={2014},
  volume={61},
  pages={300-307}
}
SPICE modeling of double-gate (DG) tunnel FETs (TFETs) including channel transports is reported. An ideal drain current model neglecting the channel transport is developed first. It captures the interband tunneling characteristics, describes their geometry dependences, and is suitable for DG TFETs with limited drivability. The ideal current model and previously proposed charge model are then extended to include the channel transports. One way to model the transport is appending a DG MOSFET in… CONTINUE READING

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