SOI TFT's with directly contacted ITO

@article{Mimura1986SOITW,
  title={SOI TFT's with directly contacted ITO},
  author={A. Mimura and M. Oohayashi and M. Ohue and J. Ohwada and Y. Hosokawa},
  journal={IEEE Electron Device Letters},
  year={1986},
  volume={7},
  pages={134-136}
}
N-channel Al-gate thin-film transistors (TFT's) were fabricated on a silicon on insulator (SOI). Indium tin oxide (ITO) was deposited directly on the n+ silicon layer of the TFT. The contact resistance between the ITO and the n+ silicon layer increases with thermal annealing. The low temperature (200°C) lift-off method of ITO is applied to achieve high-quality TFT's for active matrices in liquid crystal displays (LCD's). 
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References

in 17th IEEE Photovoltaic Spec
  • Conf., SID 84 Dig., 1984, p. 316. 131, p 1188, 1984. Symp. Proc., vol. 33, 1984, p. 215. Lett., vol. EDL-4, p. 132
  • 1983