SOI FED-SRAM Cell: Structure and Operation

Abstract

A static memory cell (SRAM) based on the field-effect diode (FED) is presented, and its operation is explained with the help of numerical device simulations. Although this new cell resembles the thin-capacitively coupled-thyristor (TCCT) SRAM cell in concept and operation, it is nevertheless characterized by significant advantages. These advantages derive… (More)

14 Figures and Tables

Cite this paper

@article{Badwan2015SOIFC, title={SOI FED-SRAM Cell: Structure and Operation}, author={Ahmad Z. Badwan and Zakariae Chbili and Qiliang Li and Dimitris E. Ioannou}, journal={IEEE Transactions on Electron Devices}, year={2015}, volume={62}, pages={2865-2870} }