SJ-FINFET: A New Low Voltage Lateral Superjunction MOSFET


This paper proposes a new SOI lateral superjunction (SJ) power transistor structure, SJ-FINFET, to address the requirement for low voltage lateral MOSFETs with low specific on-resistance (R<sub>on,sp</sub>). The SJ-FINFET consists of a 3D trench gate and a SJ drift region (the fin) to reduce both the channel resistance and the drift region resistance. The… (More)


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