SILC and NBTI in pMOSFETs With Ultrathin SiON Gate Dielectrics

@article{Tsujikawa2007SILCAN,
  title={SILC and NBTI in pMOSFETs With Ultrathin SiON Gate Dielectrics},
  author={Shimpei Tsujikawa},
  journal={IEEE Transactions on Electron Devices},
  year={2007},
  volume={54},
  pages={524-530}
}
Degradation of pMOSFETs under negative gate bias stress has been intensively studied, bearing in mind the macroscopic and phenomenological similarity between stress-induced leakage current (SILC) and negative bias temperature instability (NBTI). By investigating the electrical characteristics of small-size pMOSFETs, the microscopic mechanisms of the degradation have been vividly revealed. In particular 1) NBTI-induced positive charge generation leading to a decrease in gate hole current and 2… CONTINUE READING

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