SET and SEU Analyses Based on Experiments and Multi-Physics Modeling Applied to the ATMEL CMOS Library in 180 and 90-nm Technological Nodes

@article{Hubert2014SETAS,
  title={SET and SEU Analyses Based on Experiments and Multi-Physics Modeling Applied to the ATMEL CMOS Library in 180 and 90-nm Technological Nodes},
  author={Guillaume Hubert and Dao Ngoc Truyen and Laurent Artola and Michel Briet and C-T. Heng and Yahya Lakys and Evelyne Leduc},
  journal={IEEE Transactions on Nuclear Science},
  year={2014},
  volume={61},
  pages={3178-3186}
}
This work describes test structures and modeling which have been applied to characterize SET pulse widths of standard ATMEL CMOS libraries in 180 and 90-nm technologies. The modeling methodology from physical-level to electrical-level induced SEU/MBU and SET, is also presented. The methodology includes the GDS extractor, the physical (carrier generation, transport and charge collection) and the circuit levels. The devices and test vehicles characterized in this work range from inverter to fully… CONTINUE READING

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