SEE and TID Effects in Transistors and Voltage Reference Devices

@article{George2016SEEAT,
  title={SEE and TID Effects in Transistors and Voltage Reference Devices},
  author={John S. George and J. R. Srour and Michael A. Tockstein and Bill Kwan and Andrew Firmin Macclesfield Wright and Jessica Bonsall and Ryuji Koga and Stanley Clinton Davis},
  journal={2016 IEEE Radiation Effects Data Workshop (REDW)},
  year={2016},
  pages={1-8}
}
We tested two transistor and two voltage reference devices for single event effects and combined displacement damage and total ionizing dose effects. The results of these tests are reported along with select on-orbit rate calculations. 

References

Publications referenced by this paper.
SHOWING 1-2 OF 2 REFERENCES

IEEE NSREC REDW Proceedings

  • A Kenna, B Rax, D Thorbourn, R Harris, S Mcclure
  • IEEE NSREC REDW Proceedings
  • 2009

IEEE NSREC REDW Proceedings

  • D Cochran, A Boutte, +10 authors T Oldham
  • IEEE NSREC REDW Proceedings
  • 1021

Similar Papers

Loading similar papers…