SEE Testing of the 4 Gb Samsung and Spansion Flash NAND

Abstract

Single event effect (SEE) testing was performed on the Samsung and Spansion 4 Gb NAND flash devices. Testing was performed up to LET = 41 MeV cm2/mg. The parts were characterized for a variety of SEE. Testing and analysis showed that MBU became more prevalent at higher LET values. 

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