S 2 DS : Physics-based compact model for circuit simulation of two-dimensional semiconductor devices including non-idealities

@inproceedings{Suryavanshi2016S2D,
  title={S 2 DS : Physics-based compact model for circuit simulation of two-dimensional semiconductor devices including non-idealities},
  author={Saurabh Suryavanshi and Eric Pop},
  year={2016}
}
We present a physics-based compact model for two-dimensional (2D) field-effect transistors (FETs) based on monolayer semiconductors such as MoS2. A semi-classical transport approach is appropriate for the 2D channel, enabling simplified analytical expressions for the drain current. In addition to intrinsic FET behavior, the model includes contact resistance, traps and impurities, quantum capacitance, fringing fields, high-field velocity saturation, and self-heating, the latter being found to… CONTINUE READING

Citations

Publications citing this paper.
Showing 1-10 of 11 extracted citations

A New Holistic Model of 2-D Semiconductor FETs

IEEE Transactions on Electron Devices • 2018
View 2 Excerpts

A New Velocity Saturation Model of MoS2 Field-Effect Transistors

IEEE Electron Device Letters • 2018
View 2 Excerpts

A Physical Model for the Hysteresis in MoS2 Transistors

IEEE Journal of the Electron Devices Society • 2018
View 1 Excerpt

Electronic, thermal, and unconventional applications of 2D materials

2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO) • 2017
View 1 Excerpt

Electrons, phonons, and unconventional applications of 2D materials

2017 IEEE International Conference on IC Design and Technology (ICICDT) • 2017

Similar Papers

Loading similar papers…