Row/Column Replacement for the Control of Hard Defects in Semiconductor RAM's

Abstract

We describe and analyze row/column replacement, the technique currently used to control hard cell defects in semiconductor RAM's during manufacture. This strategy is shown to be asymptotically ineffective; it is demonstrated that this ineffectiveness may become a limiting issue for very large memory arrays. 
DOI: 10.1109/TC.1986.1676701

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