Root-Cause Analysis of Peak Power Saturation in Pulse-Pumped 1100 nm Broad Area Single Emitter Diode Lasers

@article{Wang2010RootCauseAO,
  title={Root-Cause Analysis of Peak Power Saturation in Pulse-Pumped 1100 nm Broad Area Single Emitter Diode Lasers},
  author={Xiaozhuo Wang and Paul Crump and Hans Joachim Wenzel and Armin Liero and Thomas Hoffmann and Agnieszka Pietrzak and Christoph Matthias Schultz and Andreas Klehr and Arnim Ginolas and Sven Einfeldt and Frank Bugge and Gox0308tz Erbert and Gux0308nther Trankle},
  journal={IEEE Journal of Quantum Electronics},
  year={2010},
  volume={46},
  pages={658-665}
}
Many physical effects can potentially limit the peak achievable output power of single emitter broad area diode lasers under high current, pulse-pumped operation conditions. Although previous studies have shown reliable operation to high pump levels (240 A, 300 ns, and 1 kHz), power was found to saturate. We present here results of a systematic study to unambiguously determine the sources of this power saturation. A combination of detailed measurements and finite element device simulation were… CONTINUE READING

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