Room-temperature polariton lasers based on GaN microcavities

@article{Malpuech2002RoomtemperaturePL,
  title={Room-temperature polariton lasers based on GaN microcavities},
  author={Guillaume Malpuech and Aldo Di Carlo and Alexey Vitalievich Kavokin and Jeremy J. Baumberg and Marian Zamfirescu and Paolo Lugli},
  journal={Applied Physics Letters},
  year={2002},
  volume={81},
  pages={412-414}
}
The critical temperature for Bose condensation of exciton polaritons in an AlGaN microcavity containing 9 GaN quantum wells is calculated to be T5460 K. We have modeled the kinetics of polaritons in such a microcavity device using the two-dimensional Boltzmann equation. Room-temperature lasing is found with a threshold as small as 100 mW. The kinetic blocking of polariton relaxation that prevents formation of the Bose-condensed phase of polaritons at low temperatures disappears at high… 

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