• DOI:10.1063/1.1494126
• Corpus ID: 59042895

Room-temperature polariton lasers based on GaN microcavities

@article{Malpuech2002RoomtemperaturePL,
  title={Room-temperature polariton lasers based on GaN microcavities},
  author={Guillaume Malpuech and Aldo Di Carlo and Alexey Vitalievich Kavokin and Jeremy J. Baumberg and Marian Zamfirescu and Paolo Lugli},
  journal={Applied Physics Letters},
  year={2002},
  volume={81},
  pages={412-414}
}

• G. Malpuech, A. Carlo, +3 authors P. Lugli
• Published 2 July 2002
• Physics
• Applied Physics Letters

The critical temperature for Bose condensation of exciton polaritons in an AlGaN microcavity containing 9 GaN quantum wells is calculated to be T5460 K. We have modeled the kinetics of polaritons in such a microcavity device using the two-dimensional Boltzmann equation. Room-temperature lasing is found with a threshold as small as 100 mW. The kinetic blocking of polariton relaxation that prevents formation of the Bose-condensed phase of polaritons at low temperatures disappears at high temperatures, especially in n-doped samples. Thus, GaN microcavities are excellent candidates for realization of room-temperature polariton lasers.