Room temperature operation of an in-plane half-adder based on ballistic Y-junctions

Abstract

We have realized an in-plane half-adder (HA) structure based on monolithically interconnected GaAs-AlGaAs Y-branched nanojunctions. A self-switching effect of the junction from an internal gating regime to a regime dominated by the ballistic injection of electrons from different terminals is observed at room temperature and exploited to demonstrate HA… (More)

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Cite this paper

@article{Reitzenstein2004RoomTO, title={Room temperature operation of an in-plane half-adder based on ballistic Y-junctions}, author={Stephan Reitzenstein and Lukas Worschech and Alfred Forchel}, journal={IEEE Electron Device Letters}, year={2004}, volume={25}, pages={462-464} }