Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers

@inproceedings{Kamath1996RoomtemperatureOO,
  title={Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers},
  author={Kiran Kamath and Pallab K. Bhattacharya and Thomas S. Sosnowski and Theodore B. Norris and Jamie D. Phillips},
  year={1996}
}
We report the room-temperature operating characteristics of InGaAs/GaAs self-organised quantum dot lasers grown by molecular beam epitaxy. The emission wavelength is 1.028 µm and Jth = 650 A/cm2 for a 90 µm × 1 mm broad-area laser. Steady-state and time-resolved photoluminescence measurements confirm that lasing occurs through the e1-hh2 higher-order transition, and the spontaneous recombination time for this transition is ≃ 200 ps. 

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