Room temperature multiplexed gas sensing using chemical-sensitive 3.5-nm-thin silicon transistors

@inproceedings{Fahad2017RoomTM,
  title={Room temperature multiplexed gas sensing using chemical-sensitive 3.5-nm-thin silicon transistors},
  author={Hossain M Fahad and Hiroshi Shiraki and Matin Amani and Chuchu Zhang and Vivek Srinivas Hebbar and Wei Gao and Hiroki Ota and Mark Hettick and Daisuke Kiriya and Yu-Ze Chen and Yu-Lun Chueh and Ali Javey},
  booktitle={Science Advances},
  year={2017}
}
There is great interest in developing a low-power gas sensing technology that can sensitively and selectively quantify the chemical composition of a target atmosphere. Nanomaterials have emerged as extremely promising candidates for this technology due to their inherent low-dimensional nature and high surface-to-volume ratio. Among these, nanoscale silicon is of great interest because pristine silicon is largely inert on its own in the context of gas sensing, unless functionalized with an… CONTINUE READING
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